高純度薄膜の形成方法

Formation of high purity thin film

Abstract

(57)【要約】 【課題】高純度の薄膜をより容易に製造する方法を提供 することを主な目的とする。 【解決手段】イオンビームスパッタによって薄膜を形成 する方法において、イオン原料をセシウムイオンでスパ ッタすることによって負イオンを発生させ、さらに加速 及び質量分離して負イオンビームとし、薄膜原料を当該 負イオンビームでスパッタすることによって基材上に薄 膜を形成させることを特徴とする高純度薄膜の形成方 法。
PROBLEM TO BE SOLVED: To easily form a high purity thin film in case of forming a thin film by ion beam sputtering by sputtering a raw material for ions by means of cesium ions to generate negative ions, further accelerating and mass-separating the ions to form a negative ion beam, and then sputtering a raw material for thin film. SOLUTION: A cesium sputter type ion source 1 having a high temp. cesium vapor inlet 2 is evacuated to a vacuum of 10<-7> Torr, and a metallic material 3 of tantalum, tungsten, etc., is irradiated with the ions from a raw material 4 for ions, and the resultant cesium ions are introduced into an ions purifier 5. The cesium ions are passed through an accelerator and a mass separator in the ion purifier 5 and introduced into a high vacuum vessel 6. A raw material 7 for thin film, composed of silicon, is irradiated with the above ions and the resultant sputtered silicon atoms and molecules are deposited on a substrate 8 on the opposite side. By this method, an extremely high purity thin silicon film can be formed on the substrate 8.

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