面位置検出方法及び面位置検出装置

Method and device for detecting surface position

Abstract

PROBLEM TO BE SOLVED: To provide a surface position detecting device, wherein measurement can be performed without being affected by electric field and magnetic field disturbances, even when a wafer itself cannot be grounded as the entire wafer is covered with an oxide film. SOLUTION: At an end part on the side of a wafer 5 of a reduction projection lens 4, sensor electrodes 20a, 20b, and 20c are attached with a sensor-fixing jig 21. The wafer 5, the entirety of which is covered with an oxide film 5a, is fixed to an insulating wafer chuck 6. The wafer chuck 6 is fixed to the surface of an X-Y stage 7 through a conductor substrate 25, while the XY stage 7 is provided on a surface of a Z-tilt stage 8. The conductor substrate 25 is grounded to fix an electric potential of the conductor substrate 25. Thus, when an electrostatic capacity between each of the sensor electrodes 20a, 20b, and 20c and the conductor substrate 25 is measured, stable measurement is executed without being affected by the electric field and magnetic field disturbance. COPYRIGHT: (C)1999,JPO
(57)【要約】 【課題】 ウェハの全体が酸化膜で覆われてウェハ自体 を接地できない場合にも、電場及び磁場の乱れの影響を 受けずに計測を行うことができる面位置検出装置を実現 する。 【解決手段】 縮小投射レンズ4のウェハ5側の端部 に、センサ固定用治具21によってセンサ電極20a, 20b,20cが取り付けられる。全体が酸化膜5aで 覆われたウェハ5が絶縁性のウェハチャック6に固定さ れる。ウェハチャック6が導体基板25を介してXYス テージ7の表面に固定され、XYステージ7はZチルト ステージ8の表面に備えられている。導体基板25を接 地して導体基板の25の電位を固定する。これにより、 センサ電極20a,20b,20cのそれぞれと導体基 板25との間の静電容量を計測する際に、電場及び磁場 の乱れの影響を受けずに、安定的に計測を行うことがで きる。

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