モード同期半導体レーザ

Mode-synchronous semiconductor laser

Abstract

PROBLEM TO BE SOLVED: To form a saturable absorber with simple constitution, by providing a modesynchronous semiconductor laser with an active layer which has a wide region where the width of one part is widened, and operating the wide region of the active layer as a saturable absorber. SOLUTION: An N-InP clad layer 12, an InGaAsP.MQW active layer 13, and a p-InP clad layer 14 are crystal-grown on an n-InP substrate 11. An SiO 2 mesa etching mask 21 in such shape that the width of a thin part is W 1 and the width of a wide part is W 2 is made, and using this, mesa etching is performed to form an active layer thin region 13A and an active layer wide region 13B. If a little larger light pulses are generated in a resonator in condition just before oscillation, the base part of the beam in pulse width suffers a large loss at this wide active layer part and the loss of the peak part becomes small, so the same effect as a saturable absorber can be obtained, and the saturable absorber can be made in simple constitution. COPYRIGHT: (C)1999,JPO
(57)【要約】 【課題】 可飽和吸収体を簡単な構成で形成することが できるモード同期半導体レーザを提供する。 【解決手段】 モード同期半導体レーザにおいて、活性 層13の一部の幅を広くした活性層幅広領域13Bを形 成することにより、この活性層幅広領域13Bを可飽和 吸収体として動作させるようにした。

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